K4T1G044QA-ZCE6T
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR2 DRAM, 256MX4, 0.45ns, CMOS, PBGA68
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B68
- Memory Width4
- Organization256MX4
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density1073741824 bit
- Memory IC TypeDDR2 DRAM
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max0.45 ns
- Number of Words268435456 words
- Terminal PositionBOTTOM
- Supply Current-Max300 mA
- Number of Terminals68
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length4,8
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA68,9X19,32
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)333 MHz
- Peak Reflow Temperature (Cel)260
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K4T1G044QA-ZCE6T