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K4S563233F-FN75

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4S563233F-FN75
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.24
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B90
  • Memory Width
    32
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e0
  • Memory IC Type
    SYNCHRONOUS DRAM
  • Refresh Cycles
    4096
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Memory Organization
    8MX32
  • Number of Terminals
    90
  • Terminal Pitch (mm)
    0.8
  • Access Time-Max (ns)
    6
  • Number of Words Code
    8M
  • Memory Density (bits)
    268435456
  • Package Body Material
    PLASTIC/EPOXY
  • Number of Words (words)
    8388608
  • Sequential Burst Length
    1,2,4,8,FP
  • Standby Current-Max (A)
    0.0005
  • Supply Current-Max (mA)
    180
  • Interleaved Burst Length
    1,2,4,8
  • Package Equivalence Code
    BGA90,9X15,32
  • Clock Frequency-Max (MHz)
    133
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -25

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K4S563233F-FN75