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K4S51323PF-MF1L

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4S51323PF-MF1L
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.28
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B90
  • Memory Width
    32
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e0
  • Memory IC Type
    SYNCHRONOUS DRAM
  • Refresh Cycles
    8192
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Memory Organization
    16MX32
  • Number of Terminals
    90
  • Terminal Pitch (mm)
    0.8
  • Access Time-Max (ns)
    7
  • Number of Words Code
    16M
  • Memory Density (bits)
    536870912
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    16777216
  • Sequential Burst Length
    1,2,4,8,FP
  • Standby Current-Max (A)
    0.0006
  • Supply Current-Max (mA)
    170
  • Interleaved Burst Length
    1,2,4,8
  • Package Equivalence Code
    BGA90,9X15,32
  • Clock Frequency-Max (MHz)
    111
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    -25

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