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K4S1G0632D-UC75

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4S1G0632D-UC75
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.32
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PDSO-G54
  • Memory Width
    4
  • Organization
    256MX4
  • Package Code
    SSOP
  • JESD-609 Code
    e3
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE, SHRINK PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Memory Density
    1073741824 bit
  • Memory IC Type
    CACHE DRAM MODULE
  • Refresh Cycles
    8192
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    5.4 ns
  • Number of Words
    268435456 words
  • Terminal Finish
    MATTE TIN
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    DUAL
  • Supply Current-Max
    230 mA
  • Number of Terminals
    54
  • Standby Current-Max
    0.004 Amp
  • Number of Words Code
    256M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    1,2,4,8
  • Interleaved Burst Length
    1,2,4,8
  • Package Equivalence Code
    SOP54,.46,32
  • Operating Temperature-Max
    70 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Nom (Vsup)
    3.3 V
  • Clock Frequency-Max (fCLK)
    133 MHz
  • Moisture Sensitivity Level
    1

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K4S1G0632D-UC75