K4R571669M-NCG6T
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionRambus DRAM, 16MX16, 53.3ns, CMOS, PBGA92
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B92
- Memory Width16
- Organization16MX16
- Package CodeFBGA
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density268435456 bit
- Memory IC TypeRAMBUS DRAM
- Terminal Pitch0.8 mm
- Access Time-Max53.3 ns
- Number of Words16777216 words
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionBOTTOM
- Number of Terminals92
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeBGA92,10X18,32
- Clock Frequency-Max (fCLK)600 MHz
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K4R571669M-NCG6T