K4R271669F-RCS80 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K4R271669F-RCS80

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Rambus DRAM, 8MX16, CMOS, PBGA54
Category
Semiconductors Memory ICs DRAMs RAMBUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
11.8
Access Mode
BLOCK ORIENTED PROTOCOL
Length (mm)
12
JESD-30 Code
R-PBGA-B54
Memory Width
16
Package Code
LBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
RAMBUS DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
SELF CONTAINED REFRESH
Memory Organization
8MX16
Number of Functions
1
Number of Terminals
54
Terminal Pitch (mm)
1.27
Number of Words Code
8M
Memory Density (bits)
134217728
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.25
Supply Voltage-Max (V)
2.63
Supply Voltage-Min (V)
2.37
Supply Voltage-Nom (V)
2.5
Number of Words (words)
8388608
Package Equivalence Code
BGA54,7X9,50
Clock Frequency-Max (MHz)
800
Peak Reflow Temperature (Cel)
240
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
30