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K4R271669D-RCS80

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4R271669D-RCS80
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.02
  • SB Code
    8542.32.00.15
  • Width
    11.8 mm
  • Length
    12 mm
  • Technology
    CMOS
  • Access Mode
    MULTI BANK PAGE BURST
  • JESD-30 Code
    R-PBGA-B54
  • Memory Width
    16
  • Organization
    8MX16
  • Package Code
    LBGA
  • Self Refresh
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, LOW PROFILE Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    134217728 bit
  • Memory IC Type
    RAMBUS DRAM
  • Operating Mode
    SYNCHRONOUS
  • Terminal Pitch
    1.27 mm
  • Number of Ports
    1
  • Number of Words
    8388608 words
  • Seated Height-Max
    1.25 mm
  • Terminal Position
    BOTTOM
  • Additional Feature
    SELF REFRESH; TERM PITCH-MAX
  • Number of Functions
    1
  • Number of Terminals
    54
  • Number of Words Code
    8M
  • Package Body Material
    PLASTIC/EPOXY
  • Supply Voltage-Max (Vsup)
    2.63 V
  • Supply Voltage-Min (Vsup)
    2.37 V
  • Supply Voltage-Nom (Vsup)
    2.5 V

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K4R271669D-RCS80
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K4R271669D-RCS80