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K4N56163QF-GC25T

Samsung Semiconductor, Inc.

K4N56163QF-GC25T Datasheet
Samsung Semiconductor, Inc. K4N56163QF-GC25T
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.24
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B84
  • Memory Width
    16
  • Organization
    16MX16
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    268435456 bit
  • Memory IC Type
    GDDR2 DRAM
  • Refresh Cycles
    8192
  • Terminal Pitch
    0.8 mm
  • Number of Words
    16777216 words
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Supply Current-Max
    430 mA
  • Number of Terminals
    84
  • Number of Words Code
    16M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    4,8
  • Interleaved Burst Length
    4,8
  • Package Equivalence Code
    BGA84,9X15,32
  • Operating Temperature-Max
    95 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Nom (Vsup)
    1.8 V
  • Clock Frequency-Max (fCLK)
    400 MHz

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K4N56163QF-GC25T