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K4N56163QF-GC200

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4N56163QF-GC200
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.24
  • SB Code
    8542.32.00.15
  • Width
    11 mm
  • Length
    13 mm
  • Technology
    CMOS
  • Access Mode
    FOUR BANK PAGE BURST
  • JESD-30 Code
    R-PBGA-B84
  • Memory Width
    16
  • Organization
    16MX16
  • Package Code
    TFBGA
  • Self Refresh
    YES
  • JESD-609 Code
    e0
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    268435456 bit
  • Memory IC Type
    DDR2 DRAM
  • Operating Mode
    SYNCHRONOUS
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    0.3 ns
  • Number of Ports
    1
  • Number of Words
    16777216 words
  • Terminal Finish
    TIN LEAD
  • Seated Height-Max
    1.2 mm
  • Terminal Position
    BOTTOM
  • Additional Feature
    AUTO/SELF REFRESH
  • Number of Functions
    1
  • Number of Terminals
    84
  • Number of Words Code
    16M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Supply Voltage-Max (Vsup)
    2.1 V
  • Supply Voltage-Min (Vsup)
    1.9 V
  • Supply Voltage-Nom (Vsup)
    2 V

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K4N56163QF-GC200
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K4N56163QF-GC200