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K4M563233G-FN60T

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4M563233G-FN60T
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.24
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B90
  • Memory Width
    32
  • Organization
    8MX32
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    268435456 bit
  • Memory IC Type
    SYNCHRONOUS DRAM
  • Refresh Cycles
    4096
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    5.4 ns
  • Number of Words
    8388608 words
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Supply Current-Max
    180 mA
  • Number of Terminals
    90
  • Standby Current-Max
    0.001 Amp
  • Number of Words Code
    8M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Sequential Burst Length
    1,2,4,8,FP
  • Interleaved Burst Length
    1,2,4,8
  • Package Equivalence Code
    BGA90,9X15,32
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    -25 Cel
  • Clock Frequency-Max (fCLK)
    166 MHz
  • Moisture Sensitivity Level
    1

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K4M563233G-FN60T