K4M563233E-EC1L
Samsung Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionSynchronous DRAM, 8MX32, 7ns, CMOS, PBGA90
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B90
- Memory Width32
- Organization8MX32
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density268435456 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Refresh Cycles4096
- Terminal Pitch0.8 mm
- Access Time-Max7 ns
- Number of Words8388608 words
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Supply Current-Max290 mA
- Number of Terminals90
- Standby Current-Max0.0012 Amp
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Sequential Burst Length1,2,4,8,FP
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeBGA90,9X15,32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min-25 Cel
- Clock Frequency-Max (fCLK)105 MHz
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K4M563233E-EC1L