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K4M56163DG-BG1L0

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4M56163DG-BG1L0
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.02
  • SB Code
    8542.32.00.15
  • Width
    8 mm
  • Length
    11 mm
  • Technology
    CMOS
  • Access Mode
    FOUR BANK PAGE BURST
  • JESD-30 Code
    R-PBGA-B54
  • Memory Width
    16
  • Organization
    8MX16
  • Package Code
    VFBGA
  • Self Refresh
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    134217728 bit
  • Memory IC Type
    SYNCHRONOUS DRAM
  • Operating Mode
    SYNCHRONOUS
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    7 ns
  • Number of Ports
    1
  • Number of Words
    8388608 words
  • Seated Height-Max
    1 mm
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Additional Feature
    AUTO/SELF REFRESH
  • Number of Functions
    1
  • Number of Terminals
    54
  • Number of Words Code
    8M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    -25 Cel
  • Supply Voltage-Max (Vsup)
    2.7 V
  • Supply Voltage-Min (Vsup)
    2.3 V
  • Supply Voltage-Nom (Vsup)
    2.5 V
  • Moisture Sensitivity Level
    3

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K4M56163DG-BG1L0