K4M561633G-BN750 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K4M561633G-BN750

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54
Category
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

Width
8 mm
Length
11 mm
I/O Type
COMMON
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PBGA-B54
Memory Width
16
Organization
16MX16
Package Code
VFBGA
Self Refresh
YES
JESD-609 Code
e1
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Terminal Pitch
0.8 mm
Access Time-Max
5.4 ns
Number of Ports
1
Number of Words
16777216 words
Terminal Finish
TIN SILVER COPPER
Seated Height-Max
1 mm
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Supply Current-Max
120 mA
Number of Functions
1
Number of Terminals
54
Standby Current-Max
0.001 Amp
Number of Words Code
16M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
1,2,4,8,FP
Interleaved Burst Length
1,2,4,8
Package Equivalence Code
BGA54,9X9,32
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-25 Cel
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
Supply Voltage-Nom (Vsup)
3 V
Clock Frequency-Max (fCLK)
133 MHz
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260