K4H561638H-UICC
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionDDR1 DRAM, 16MX16, 0.65ns, CMOS, PDSO66
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G66
- Memory Width16
- Organization16MX16
- Package CodeTSSOP
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density268435456 bit
- Memory IC TypeDDR1 DRAM
- Refresh Cycles8192
- Terminal Pitch0.635 mm
- Access Time-Max0.65 ns
- Number of Words16777216 words
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Supply Current-Max350 mA
- Number of Terminals66
- Standby Current-Max0.004 Amp
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length2,4,8
- Interleaved Burst Length2,4,8
- Package Equivalence CodeTSSOP66,.46
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Nom (Vsup)2.6 V
- Clock Frequency-Max (fCLK)200 MHz
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K4H561638H-UICC