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K4H560838D-NCB3

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4H560838D-NCB3
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.24
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Access Mode
    FOUR BANK PAGE BURST
  • JESD-30 Code
    R-PDSO-G54
  • Memory Width
    8
  • Organization
    32MX8
  • Package Code
    SOP
  • Self Refresh
    YES
  • JESD-609 Code
    e0
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Memory Density
    268435456 bit
  • Memory IC Type
    DDR1 DRAM
  • Operating Mode
    SYNCHRONOUS
  • Refresh Cycles
    8192
  • Terminal Pitch
    0.5 mm
  • Access Time-Max
    0.7 ns
  • Number of Ports
    1
  • Number of Words
    33554432 words
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    DUAL
  • Additional Feature
    AUTO/SELF REFRESH
  • Supply Current-Max
    325 mA
  • Number of Functions
    1
  • Number of Terminals
    54
  • Standby Current-Max
    0.003 Amp
  • Number of Words Code
    32M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    2,4,8
  • Interleaved Burst Length
    2,4,8
  • Package Equivalence Code
    TSSOP54,.36,20
  • Operating Temperature-Max
    70 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Max (Vsup)
    2.7 V
  • Supply Voltage-Min (Vsup)
    2.3 V
  • Supply Voltage-Nom (Vsup)
    2.5 V
  • Clock Frequency-Max (fCLK)
    166 MHz

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K4H560838D-NCB3