K4H511638D-ULA2T
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionCache DRAM Module, 32MX16, 0.75ns, CMOS, PDSO66
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G66
- Memory Width16
- Organization32MX16
- Package CodeTSSOP
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density536870912 bit
- Memory IC TypeCACHE DRAM MODULE
- Refresh Cycles8192
- Terminal Pitch0.635 mm
- Access Time-Max0.75 ns
- Number of Words33554432 words
- Terminal FinishMATTE TIN
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max345 mA
- Number of Terminals66
- Standby Current-Max0.005 Amp
- Number of Words Code32M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length2,4,8
- Interleaved Burst Length2,4,8
- Package Equivalence CodeTSSOP66,.46
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)133 MHz
- Moisture Sensitivity Level1
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K4H511638D-ULA2T