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K4G323222M-QC80

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4G323222M-QC80
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.02
  • SB Code
    8542.32.00.15
  • Width
    14 mm
  • Length
    20 mm
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Access Mode
    DUAL BANK PAGE BURST
  • JESD-30 Code
    R-PQFP-G100
  • Memory Width
    32
  • Organization
    1MX32
  • Package Code
    TQFP
  • Self Refresh
    YES
  • JESD-609 Code
    e0
  • Package Shape
    RECTANGULAR
  • Package Style
    FLATPACK, THIN PROFILE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Memory Density
    33554432 bit
  • Memory IC Type
    SYNCHRONOUS GRAPHICS RAM
  • Operating Mode
    SYNCHRONOUS
  • Refresh Cycles
    2048
  • Terminal Pitch
    0.65 mm
  • Access Time-Max
    6 ns
  • Number of Ports
    1
  • Number of Words
    1048576 words
  • Terminal Finish
    TIN LEAD
  • Seated Height-Max
    1.2 mm
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    QUAD
  • Additional Feature
    AUTO/SELF REFRESH
  • Supply Current-Max
    200 mA
  • Number of Functions
    1
  • Number of Terminals
    100
  • Standby Current-Max
    0.002 Amp
  • Number of Words Code
    1M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    1,2,4,8,FP
  • Interleaved Burst Length
    4,8
  • Package Equivalence Code
    TQFP100,.7X.9,25
  • Operating Temperature-Max
    70 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Max (Vsup)
    3.6 V
  • Supply Voltage-Min (Vsup)
    3 V
  • Supply Voltage-Nom (Vsup)
    3.3 V
  • Clock Frequency-Max (fCLK)
    125 MHz

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K4G323222M-QC80
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K4G323222M-QC80