K4F6E3S4HM-MGCJ0
Samsung Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionLPDDR4 DRAM, 512MX32, CMOS, PBGA200
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10
- Length (mm)14.5
- JESD-30 CodeR-PBGA-B200
- Memory Width32
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeLPDDR4 DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal PositionBOTTOM
- Memory Organization512MX32
- Number of Functions1
- Number of Terminals200
- Terminal Pitch (mm)0.65
- Number of Words Code512M
- Memory Density (bits)17179869184
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.1
- Supply Voltage-Nom (V)1.1
- Number of Words (words)536870912
- Package Equivalence CodeBGA200,12X22,32/25
- Clock Frequency-Max (MHz)1867
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-25
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K4F6E3S4HM-MGCJ0