K4F6E304HB-MGCH0
Samsung Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionDDR4 DRAM, 512MX32, CMOS, PBGA200
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B200
- Memory Width32
- Organization512MX32
- Package CodeBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density17179869184 bit
- Memory IC TypeDDR4 DRAM
- Operating ModeASYNCHRONOUS
- Number of Ports1
- Number of Words536870912 words
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Number of Functions1
- Number of Terminals200
- Number of Words Code512M
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-25 Cel
- Supply Voltage-Nom (Vsup)1.8 V
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K4F6E304HB-MGCH0