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K4D26323QG-GC25

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4D26323QG-GC25
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.02
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    S-PBGA-B144
  • Memory Width
    32
  • Organization
    4MX32
  • Package Code
    FBGA
  • JESD-609 Code
    e0
  • Package Shape
    SQUARE
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    134217728 bit
  • Memory IC Type
    GDDR1 DRAM
  • Refresh Cycles
    4096
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    0.45 ns
  • Number of Words
    4194304 words
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    BOTTOM
  • Supply Current-Max
    490 mA
  • Number of Terminals
    144
  • Standby Current-Max
    0.053 Amp
  • Number of Words Code
    4M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    2,4,8
  • Interleaved Burst Length
    2,4,8
  • Package Equivalence Code
    BGA144,12X12,32
  • Operating Temperature-Max
    65 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Nom (Vsup)
    1.8 V
  • Clock Frequency-Max (fCLK)
    400 MHz

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K4D26323QG-GC25