K4B4G1646D-BPH90 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K4B4G1646D-BPH90

Lifecycle status
Active-Unconfirmed
RoHS
RoHS compliant
REACH
REACH compliant
Description
DDR3 DRAM, 256MX16, 0.255ns, CMOS, PBGA96
Category
Semiconductors Memory ICs DRAMs DDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Width
7.5 mm
Length
13.3 mm
Technology
CMOS
Access Mode
MULTI BANK PAGE BURST
JESD-30 Code
R-PBGA-B96
Memory Width
16
Organization
256MX16
Package Code
TFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
4294967296 bit
Memory IC Type
DDR3 DRAM
Operating Mode
SYNCHRONOUS
Terminal Pitch
0.8 mm
Access Time-Max
0.255 ns
Number of Ports
1
Number of Words
268435456 words
Seated Height-Max
1.2 mm
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
PROGRAMMABLE CAS LATENCY
Number of Functions
1
Number of Terminals
96
Number of Words Code
256M
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-40 Cel
Supply Voltage-Max (Vsup)
1.575 V
Supply Voltage-Min (Vsup)
1.425 V
Supply Voltage-Nom (Vsup)
1.5 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED