ProductsManufacturers
Events
Send an RFQBOM Tool

K4B2G1646B-HIH9

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4B2G1646B-HIH9
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.36
  • SB Code
    8542.32.00.23
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B96
  • Memory Width
    16
  • Organization
    128MX16
  • Package Code
    FBGA
  • JESD-609 Code
    e3
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    2147483648 bit
  • Memory IC Type
    CACHE DRAM MODULE
  • Refresh Cycles
    8192
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    0.255 ns
  • Number of Words
    134217728 words
  • Terminal Finish
    MATTE TIN
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Supply Current-Max
    300 mA
  • Number of Terminals
    96
  • Standby Current-Max
    0.012 Amp
  • Number of Words Code
    128M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    8
  • Interleaved Burst Length
    8
  • Package Equivalence Code
    BGA96,9X16,32
  • Operating Temperature-Max
    95 Cel
  • Operating Temperature-Min
    -40 Cel
  • Supply Voltage-Nom (Vsup)
    1.5 V
  • Clock Frequency-Max (fCLK)
    667 MHz
  • Moisture Sensitivity Level
    1
  • Peak Reflow Temperature (Cel)
    260

0 suppliers available to buy or to bid for K4B2G1646B-HIH9

Send an RFQ

Your RFQ will be directly sent to our expert: Pari

Send an RFQ
K4B2G1646B-HIH9
Send an RFQ
K4B2G1646B-HIH9