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K4B2G0846D-HYF8T

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4B2G0846D-HYF8T
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.36
  • SB Code
    8542.32.00.23
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B78
  • Memory Width
    8
  • Organization
    256MX8
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    2147483648 bit
  • Memory IC Type
    DDR3L DRAM
  • Refresh Cycles
    8192
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    0.3 ns
  • Number of Words
    268435456 words
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Supply Current-Max
    110 mA
  • Number of Terminals
    78
  • Standby Current-Max
    0.01 Amp
  • Number of Words Code
    256M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    8
  • Interleaved Burst Length
    8
  • Package Equivalence Code
    BGA78,9X13,32
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Nom (Vsup)
    1.35 V
  • Clock Frequency-Max (fCLK)
    533 MHz

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K4B2G0846D-HYF8T