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K4B2G0846C-HYK0

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4B2G0846C-HYK0
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.36
  • SB Code
    8542.32.00.23
  • Width
    7.5 mm
  • Length
    11 mm
  • Technology
    CMOS
  • Access Mode
    MULTI BANK PAGE BURST
  • JESD-30 Code
    R-PBGA-B78
  • Memory Width
    8
  • Organization
    256MX8
  • Package Code
    TFBGA
  • Self Refresh
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    2147483648 bit
  • Memory IC Type
    DDR3L DRAM
  • Operating Mode
    SYNCHRONOUS
  • Terminal Pitch
    0.8 mm
  • Number of Ports
    1
  • Number of Words
    268435456 words
  • Seated Height-Max
    1.2 mm
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Additional Feature
    AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
  • Number of Functions
    1
  • Number of Terminals
    78
  • Number of Words Code
    256M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Operating Temperature-Max
    85 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Max (Vsup)
    1.45 V
  • Supply Voltage-Min (Vsup)
    1.283 V
  • Supply Voltage-Nom (Vsup)
    1.35 V
  • Moisture Sensitivity Level
    3
  • Peak Reflow Temperature (Cel)
    260

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