K4B2G0446C-HYK00 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K4B2G0446C-HYK00

Lifecycle status
Active-Unconfirmed
REACH
REACH compliant
Description
DDR3 DRAM, 256MX8, CMOS, PBGA78
Category
Semiconductors Memory ICs DRAMs DDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Width (mm)
7.5
Length (mm)
11
JESD-30 Code
R-PBGA-B78
Memory Width
8
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
256MX8
Number of Functions
1
Number of Terminals
78
Terminal Pitch (mm)
0.8
Number of Words Code
256M
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Alternate Memory Width
4
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
268435456
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
0