K4B1G1646I-BYK0T00
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionDDR3L DRAM, 64MX16, CMOS, PBGA96
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)7.5
- Access ModeMULTI BANK PAGE BURST
- Length (mm)13.3
- JESD-30 CodeR-PBGA-B96
- Memory Width16
- Package CodeVFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR3L DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal PositionBOTTOM
- Additional FeatureELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY;ALSO CONFIGURED AS 256Mbitx4
- Memory Organization64MX16
- Number of Functions1
- Number of Terminals96
- Terminal Pitch (mm)0.8
- Number of Words Code64M
- Memory Density (bits)1073741824
- Package Body MaterialPLASTIC/EPOXY
- Alternate Memory Width8
- Output Characteristics3-STATE
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)1.45
- Supply Voltage-Min (V)1.283
- Supply Voltage-Nom (V)1.35
- Number of Words (words)67108864
- Sequential Burst Length4,8
- Standby Current-Max (A)0.01
- Supply Current-Max (mA)180
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA96,9X16,32
- Clock Frequency-Max (MHz)800
- Operating Temperature-Max (Cel)95
- Operating Temperature-Min (Cel)0
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