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K4B1G1646E

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4B1G1646E
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.32
  • SB Code
    8542.32.00.15
  • Technology
    CMOS
  • Width (mm)
    7.5
  • Access Mode
    MULTI BANK PAGE BURST
  • Length (mm)
    13.3
  • JESD-30 Code
    R-PBGA-B96
  • Memory Width
    16
  • Package Code
    TFBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    DDR3 DRAM
  • Operating Mode
    SYNCHRONOUS
  • Number of Ports
    1
  • Terminal Position
    BOTTOM
  • Memory Organization
    64MX16
  • Number of Functions
    1
  • Number of Terminals
    96
  • Terminal Pitch (mm)
    0.8
  • Number of Words Code
    64M
  • Memory Density (bits)
    1073741824
  • Package Body Material
    PLASTIC/EPOXY
  • Seated Height-Max (mm)
    1.2
  • Supply Voltage-Nom (V)
    1.5
  • Number of Words (words)
    67108864
  • Package Equivalence Code
    BGA96,9X16,32
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    0

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K4B1G1646E