K4B1G1646D-HCF8T by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. K4B1G1646D-HCF8T

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Cache DRAM Module, 64MX16, 0.3ns, CMOS, PBGA100
Category
Semiconductors Memory ICs DRAMs CACHE DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B100
Memory Width
16
Package Code
FBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
CACHE DRAM MODULE
Refresh Cycles
8192
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Memory Organization
64MX16
Number of Terminals
100
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.3
Number of Words Code
64M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
1.5
Number of Words (words)
67108864
Sequential Burst Length
8
Standby Current-Max (A)
0.01
Supply Current-Max (mA)
310
Interleaved Burst Length
8
Package Equivalence Code
BGA100,11X16,32
Clock Frequency-Max (MHz)
533
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260