K4B1G0446C-ZCF7T
Samsung Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionDDR3 DRAM, 256MX4, 0.4ns, CMOS, PBGA94
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B94
- Memory Width4
- Organization256MX4
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density1073741824 bit
- Memory IC TypeDDR3 DRAM
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max0.4 ns
- Number of Words268435456 words
- Terminal PositionBOTTOM
- Number of Terminals94
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length8
- Interleaved Burst Length8
- Package Equivalence CodeBGA94,11X19,32
- Supply Voltage-Nom (Vsup)1.5 V
- Clock Frequency-Max (fCLK)400 MHz
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K4B1G0446C-ZCF7T