K1S3216BCC-FI70T
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionApplication Specific SRAM, 2MX16, 70ns, CMOS, PBGA48
- Category
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)6
- Length (mm)8
- JESD-30 CodeR-PBGA-B48
- Memory Width16
- Package CodeVFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeAPPLICATION SPECIFIC SRAM
- Operating ModeASYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization2MX16
- Number of Functions1
- Number of Terminals48
- Terminal Pitch (mm)0.75
- Access Time-Max (ns)70
- Number of Words Code2M
- Memory Density (bits)33554432
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1
- Supply Voltage-Max (V)2.1
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)2097152
- Standby Current-Max (A)0.0001
- Supply Current-Max (mA)35
- Package Equivalence CodeBGA48,6X8,30
- Moisture Sensitivity Level1
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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