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K1S1616B5M-EE850

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K1S1616B5M-EE850
  • ECCN
    3A991.b.2.a
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B48
  • Memory Width
    16
  • Package Code
    VFBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    PSEUDO STATIC RAM
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    OTHER
  • Terminal Position
    BOTTOM
  • Memory Organization
    1MX16
  • Number of Functions
    1
  • Number of Terminals
    48
  • Terminal Pitch (mm)
    0.75
  • Access Time-Max (ns)
    85
  • Number of Words Code
    1M
  • Memory Density (bits)
    16777216
  • Package Body Material
    PLASTIC/EPOXY
  • Seated Height-Max (mm)
    1
  • Supply Voltage-Max (V)
    2.2
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    1048576
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -25

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K1S1616B5M-EE850