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K1B1616B2B-FI70T

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K1B1616B2B-FI70T
  • ECCN
    3A991.b.2.a
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B54
  • Memory Width
    16
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    APPLICATION SPECIFIC SRAM
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    INDUSTRIAL
  • Terminal Position
    BOTTOM
  • Memory Organization
    1MX16
  • Number of Terminals
    54
  • Terminal Pitch (mm)
    0.75
  • Access Time-Max (ns)
    70
  • Number of Words Code
    1M
  • Memory Density (bits)
    16777216
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    1048576
  • Package Equivalence Code
    BGA54,6X9,30
  • Moisture Sensitivity Level
    1
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40

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K1B1616B2B-FI70T