JO2015A
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-CXFM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- Terminal PositionUNSPECIFIED
- Additional FeatureDIFFUSED BALLAST RESISTORS
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)10 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Transistor ApplicationAMPLIFIER
- DC Current Gain-Min (hFE)10
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)10 A
- Power Dissipation-Max (Abs)70 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max30 V
- Transition Frequency-Nom (fT)400 MHz
- Collector-base Capacitance-Max80 pF
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JO2015A
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JO2015A