JANTXVR2N7275
Intersil Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 5A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Additional FeatureRADIATION HARDENED
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
- Avalanche Energy Rating (Eas) (mJ)11
- Pulsed Drain Current-Max (IDM) (A)15
- Screening Level / Reference StandardMIL-19500/604B
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