JANTXV2N6782 by SEMICOA | Sourcengine

SEMICOA JANTXV2N6782

Lifecycle status
Contact Mfr
Description
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AF
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
3.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Avalanche Energy Rating (Eas) (mJ)
68
Pulsed Drain Current-Max (IDM) (A)
14
Drain-source On Resistance-Max (ohm)
0.61
Screening Level / Reference Standard
MIL-19500