JANTXV2N6770 by International Rectifier Corporation | Sourcengine

International Rectifier Corporation JANTXV2N6770

Lifecycle status
Transferred
REACH
REACH compliant
Description
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
O-MBFM-P2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-204
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
150
Drain Current-Max (ID) (A)
12
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
225
DS Breakdown Voltage-Min (V)
500
Turn-off Time-Max (toff) (ns)
300
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
150
Avalanche Energy Rating (Eas) (mJ)
8
Pulsed Drain Current-Max (IDM) (A)
48
Drain-source On Resistance-Max (ohm)
0.5
Screening Level / Reference Standard
MIL-19500/543