JANTXV2N3997
SILICON TRANSISTOR CORP
- Lifecycle statusTransferred
- DescriptionPower Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MUPM-D3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-59
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- VCEsat-Max (V)0.25
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)80
- Power Dissipation-Max (W)2
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)1
- Operating Temperature-Max (Cel)175
- Collector-emitter Voltage-Max (V)80
- Transition Frequency-Nom (fT) (MHz)40
- Screening Level / Reference StandardMIL
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JANTXV2N3997