JANTX2N6802 by International Rectifier Corporation | Sourcengine

International Rectifier Corporation JANTX2N6802

Lifecycle status
Transferred
REACH
REACH compliant
Description
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AF
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
25
Drain Current-Max (ID) (A)
2.5
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
60
DS Breakdown Voltage-Min (V)
500
Turn-off Time-Max (toff) (ns)
85
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
25
Avalanche Energy Rating (Eas) (mJ)
0.35
Pulsed Drain Current-Max (IDM) (A)
11
Drain-source On Resistance-Max (ohm)
1.6
Screening Level / Reference Standard
MIL-19500/557