JANSR2N7485U3 by VPT COMPONENTS | Sourcengine

VPT COMPONENTS JANSR2N7485U3

Lifecycle status
Active
Description
Power Field-Effect Transistor, 20A I(D), 130V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-N3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-276AA
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Qualified
Terminal Position
DUAL
Additional Feature
MIL-STD-750; MIL-STD-883
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
75
Drain Current-Max (ID) (A)
20
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
130
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
2.5
Avalanche Energy Rating (Eas) (mJ)
65
Pulsed Drain Current-Max (IDM) (A)
80
Drain-source On Resistance-Max (ohm)
0.08
Screening Level / Reference Standard
MIL-PRF-19500; RH - 100K Rad(Si)