JANSR2N7270 by International Rectifier Corporation | Sourcengine

International Rectifier Corporation JANSR2N7270

Lifecycle status
Transferred
REACH
REACH compliant
Description
Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
S-CSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-254AA
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
11
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
235
DS Breakdown Voltage-Min (V)
500
Turn-off Time-Max (toff) (ns)
320
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
150
Avalanche Energy Rating (Eas) (mJ)
500
Pulsed Drain Current-Max (IDM) (A)
44
Drain-source On Resistance-Max (ohm)
0.5
Screening Level / Reference Standard
MIL-19500/603