JANS2N5109UB by Microsemi Corporation | Sourcengine

Microsemi Corporation JANS2N5109UB

Lifecycle status
Discontinued
Description
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
Category
Semiconductors Transistors RF Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-CDSO-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
15
Power Dissipation-Max (W)
2.9
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.4
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
20
Power Dissipation Ambient-Max (W)
1
Collector-base Capacitance-Max (pF)
3.5
Screening Level / Reference Standard
MIL-19500/453
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED