JANS2N3867U4 by Microsemi Corporation | Sourcengine

Microsemi Corporation JANS2N3867U4

Lifecycle status
Transferred
REACH
REACH compliant
Description
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Category
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XBCC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
VCEsat-Max (V)
0.75
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
35
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
3
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
40
Collector-base Capacitance-Max (pF)
120
Screening Level / Reference Standard
MIL-PRF-19500