JANS2N3866A
Microsemi Corporation
- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-205AD
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-205AD
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- J-STD-609 Codee0
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)25
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)0.4
- Collector-emitter Voltage-Max (V)30
- Power Dissipation Ambient-Max (W)1
- Collector-base Capacitance-Max (pF)3.5
- Screening Level / Reference StandardMIL-19500/398F
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JANS2N3866A