JAN2N6660 by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. JAN2N6660

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 0.99A I(D), 60V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AD
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
DLA Qualification
Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
6.25
Drain Current-Max (ID) (A)
0.99
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
10
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
10
Turn-off Time-Max (toff) (ns)
10
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
0.725
Pulsed Drain Current-Max (IDM) (A)
3
Drain-source On Resistance-Max (ohm)
3
Screening Level / Reference Standard
MIL-PRF-19500