JAN2N5666U3 by VPT COMPONENTS | Sourcengine

VPT COMPONENTS JAN2N5666U3

Lifecycle status
Active
Description
Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
Category
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-XDSO-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
VCEsat-Max (V)
1
Case Connection
COLLECTOR
DLA Qualification
Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
15
Power Dissipation-Max (W)
35
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
250
Turn-off Time-Max (toff) (ns)
1500
Collector Current-Max (IC) (A)
5
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
200
Power Dissipation Ambient-Max (W)
1.5
Collector-base Capacitance-Max (pF)
120
Screening Level / Reference Standard
MIL-19500