JAN2N1043
GPD OPTOELECTRONICS CORP
- Lifecycle statusDiscontinued
- DescriptionPower Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Germanium, Metal, 3 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBPM-W3
- ConfigurationSINGLE
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormWIRE
- Case ConnectionCOLLECTOR
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)20
- Power Dissipation-Max (W)20
- Transistor Element MaterialGERMANIUM
- Collector Current-Max (IC) (A)3
- Operating Temperature-Max (Cel)100
- Collector-emitter Voltage-Max (V)40
- Transition Frequency-Nom (fT) (MHz)0.25
- Screening Level / Reference StandardMIL-19500/137C
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