IXXN110N65C4H1 by Littelfuse | Sourcengine

Littelfuse IXXN110N65C4H1

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 210A I(C), 650V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.35
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
750
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
71
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
160
Collector Current-Max (IC) (A)
210
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
650
Screening Level / Reference Standard
UL RECOGNIZED