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IXTN22N100L

IXYS Corporation

IXTN22N100L Datasheet
IXYS Corporation IXTN22N100L
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PUFM-X4
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    UNSPECIFIED
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • Terminal Finish
    Nickel (Ni)
  • DLA Qualification
    Not Qualified
  • Terminal Position
    UPPER
  • Number of Elements
    1
  • Number of Terminals
    4
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (W)
    700
  • Drain Current-Max (ID) (A)
    22
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    1000
  • Operating Temperature-Max (Cel)
    150
  • Avalanche Energy Rating (Eas) (mJ)
    1500
  • Pulsed Drain Current-Max (IDM) (A)
    50
  • Drain-source On Resistance-Max (ohm)
    0.6
  • Screening Level / Reference Standard
    UL RECOGNIZED

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IXTN22N100L
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IXTN22N100L