IXTA3N100P by Littelfuse | Sourcengine

Littelfuse IXTA3N100P

Lifecycle status
Active
RoHS
RoHS compliant
Description
MOSFET, IXTA3N100P, LITTELFUSE A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and space saving. Features International standard package Low RDS(ON) and QG Low package inductance Applications Switch-mode and resonant-mode power supplies DC-DC converters Laser drivers AC and DC motor drives Robotics and servo controls
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
125
Drain Current-Max (ID) (A)
3
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
1000
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
200
Pulsed Drain Current-Max (IDM) (A)
6
Drain-source On Resistance-Max (ohm)
4.8
Time@Peak Reflow Temperature-Max (s)
10