IXSN55N120U1
IXYS Corporation
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)83 A
- Power Dissipation-Max (Abs)403 W
- Gate-emitter Thr Voltage-Max8 V
- Collector-emitter Voltage-Max1200 V
0 suppliers available to buy or to bid for IXSN55N120U1
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
IXSN55N120U1
Send an RFQ
IXSN55N120U1